ELECTRON-MICROSCOPE STUDIES OF ION-IMPLANTED SILICON AND GALLIUM-ARSENIDE AFTER LASER AND FURNACE ANNEALING

被引：6

作者：

SADANA, DK ^{[1
]}

WILSON, MC ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00245.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：51 / 59

页数：9

共 7 条

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KULAR, SS ;

SEALY, BJ ;

BADAWI, MH ;

STEPHENS, KG ;

SADANA, D ;

BOOKER, GR .

[2]

KULAR SS, 1979, SOLID STATE ELECTRON

[3]

Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[4]

PETTIT HR, 1971, 25TH P ANN M EMAG I, P290

[5]

READY JF, 1971, EFFECTS HIGH POWER L, P1

[6] NEW THIN-FILM ENCAPSULANT FOR ION-IMPLANTED GAAS [J].

SEALY, BJ ;

SURRIDGE, RK .

[7]

SMITH B, 1977, ION IMPLANTATION RAN