ON COMPENSATION AND CONDUCTIVITY MODELS FOR MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURE

被引：64
作者：
LOOK, DC
机构：
[1] University Research Center, Wright State University, Dayton
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期
关键词：
D O I：
10.1063/1.349295
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Molecular-beam-epitaxial GaAs grown at 200-degrees-C has an extremely high ( > 10(19) cm-3) concentration of As(Ga) defects and, after an anneal at 550-600-degrees-C, a high concentration of As precipitates. The relative roles of the As(Ga) defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models.
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页码：3148 / 3151
页数：4
相关论文
共 25 条
[1]  
BLAKEMORE JS, 1986, SEMIINSULATING 3 5 M, P389
[2]   A1INAS-GAINAS HEMTS UTILIZING LOW-TEMPERATURE A1INAS BUFFERS GROWN BY MBE [J].
BROWN, AS ;
MISHRA, UK ;
CHOU, CS ;
HOOPER, CE ;
MELENDES, MA ;
THOMPSON, M ;
LARSON, LE ;
ROSENBAUM, SE ;
DELANEY, MJ .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :565-567
[3]   LOW-TEMPERATURE BUFFER GAAS-MESFET TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUIT APPLICATIONS [J].
DELANEY, MJ ;
CHOU, CS ;
LARSON, LE ;
JENSEN, JF ;
DEAKIN, DS ;
BROWN, AS ;
HOOPER, WW ;
THOMPSON, MA ;
MCCRAY, LG ;
ROSENBAUM, SE .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (08) :355-357
[4]  
Duncan W. M., 1987, Gallium Arsenide and Related Compounds 1986. Proceedings of the Thirteenth International Symposium, P39
[5]   LIMITED THICKNESS EPITAXY IN GAAS MOLECULAR-BEAM EPITAXY NEAR 200-DEGREES-C [J].
EAGLESHAM, DJ ;
PFEIFFER, LN ;
WEST, KW ;
DYKAAR, DR .
APPLIED PHYSICS LETTERS, 1991, 58 (01) :65-67
[6]   HIGH-VOLTAGE PICOSECOND PHOTOCONDUCTOR SWITCH BASED ON LOW-TEMPERATURE-GROWN GAAS [J].
FRANKEL, MY ;
WHITAKER, JF ;
MOUROU, GA ;
SMITH, FW ;
CALAWA, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (12) :2493-2498
[7]   STOICHIOMETRY-RELATED DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].
KAMINSKA, M ;
WEBER, ER ;
LILIENTALWEBER, Z ;
LEON, R ;
REK, ZU .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :710-713
[8]   STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].
KAMINSKA, M ;
LILIENTALWEBER, Z ;
WEBER, ER ;
GEORGE, T ;
KORTRIGHT, JB ;
SMITH, FW ;
TSAUR, BY ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1881-1883
[9]  
KAMINSKA M, 1990, SEMI-INSULATING III-V MATERIALS, TORONTO 1990, P111
[10]   BREAKDOWN OF CRYSTALLINITY IN LOW-TEMPERATURE-GROWN GAAS-LAYERS [J].
LILIENTALWEBER, Z ;
SWIDER, W ;
YU, KM ;
KORTRIGHT, J ;
SMITH, FW ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1991, 58 (19) :2153-2155
123