SELECTIVE EPITAXIAL-GROWTH OF SILICON BY USING SILICON-NITRIDE FILM AS A MASK

被引:17
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OGAWA, H
NISHINAGA, T
ARIZUMI, T
KASUGA, M
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10.1143/JJAP.10.1675
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O59 [应用物理学];
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页码:1675 / +
页数:1
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