ESTIMATION OF THIN-OXIDE RELIABILITY USING PROPORTIONAL HAZARDS MODELS

被引:28
作者
ELSAYED, EA [1 ]
CHAN, CK [1 ]
机构
[1] AT&T BELL LABS,WHIPPANY,NJ 07981
关键词
D O I
10.1109/24.103013
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Proportional hazards models for estimating thin-oxide dielectric reliability and time-dependent dielectric-breakdown hazard rates are developed. Two groups of models are considered: group one ignores interactions between temperature and electric field, while group two considers several forms of interactions. The inclusion of interaction is not statistically significant at the 1% level. An analysis of the Hokari time-dependent dielectric-breakdown data, in terms of the form of the electric-field acceleration factor, shows that approach of I. C. Chen et al. (1985) is more appropriate than the approach of D. L. Crook (1979).
引用
收藏
页码:329 / 335
页数:7
相关论文
共 28 条
[1]  
Anolick E. S., 1979, 17th Annual Proceedings Reliability Physics, P8, DOI 10.1109/IRPS.1979.362864
[2]  
ANOLICK ES, 1982, 20TH P INT REL PHYS, P238
[3]   ELECTRON-TUNNELING AT AL-SIO2 INTERFACES [J].
AVRON, M ;
SHATZKES, M ;
DISTEFANO, TH ;
GDULA, RA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2897-2908
[4]  
Barrett C. R., 1976, International Electron Devices Meeting. (Technical digest), P319
[5]  
Berman A., 1981, 19TH ANN P INT REL P, P204
[6]   COVARIANCE ANALYSIS OF CENSORED SURVIVAL DATA [J].
BRESLOW, N .
BIOMETRICS, 1974, 30 (01) :89-99
[7]   OXIDE DEFECT DENSITIES AND RELATED BREAKDOWN LIFETIMES [J].
CHAN, CK ;
WAGGENER, HA .
THIN SOLID FILMS, 1986, 143 (02) :119-125
[8]  
Chen I. C., 1985, 23rd Annual Proceedings Reliability Physics 1985 (Cat. No. 85CH2113-9), P24, DOI 10.1109/IRPS.1985.362070
[9]  
CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957
[10]   ACCELERATED TESTING OF TIME-DEPENDENT BREAKDOWN OF SIO2 [J].
CHEN, IC ;
HU, CM .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :140-142