AUBE PARA-INGAASP CONTACT FORMED BY RAPID THERMAL-PROCESSING

被引：15

作者：

KATZ, A

THOMAS, PM

CHU, SNG

LEE, JW

DAUTREMONTSMITH, WC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2056 / 2060

页数：5

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KATZ, A ;

DAUTREMONTSMITH, WC ;

THOMAS, PM ;

KOSZI, LA ;

LEE, JW ;

RIGGS, VG ;

BROWN, RL ;

ZILKO, JL ;

LAHAV, A .

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[8] PT/TI/P-IN0.53GA0.47AS LOW-RESISTANCE NONALLOYED OHMIC CONTACT FORMED BY RAPID THERMAL-PROCESSING [J].

KATZ, A ;

DAUTREMONTSMITH, WC ;

CHU, SNG ;

THOMAS, PM ;

KOSZI, LA ;

LEE, JW ;

RIGGS, VG ;

BROWN, RL ;

NAPHOLTZ, SG ;

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LAHAV, A .

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