MEASUREMENT OF THE LOW-FIELD ELECTRON-MOBILITY AND COMPENSATION RATIO PROFILES IN GAAS FIELD-EFFECT TRANSISTORS

被引：21
作者：
FOLKES, PA
机构：
[1] Bell Communications Research, Murray, Hill, NJ, USA, Bell Communications Research, Murray Hill, NJ, USA
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 06期
关键词：
D O I：
10.1063/1.96521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
12
引用
收藏
页码：431 / 433
页数：3
相关论文
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