In situ differential reflectance spectroscopy study of solid phase epitaxy in Si(111)-Fe and Si(111)-Cr systems

被引：7

作者：

Dotsenko, Sergey Andreevich ^{[1
]}

Galkin, Nickolay Gennadievich ^{[1
]}

Koval, Ludmila Valerievna ^{[2
]}

Polyarnyi, Vyacheslav Olegovich ^{[1
]}

机构：

[1] RAS, FEB, Inst Automat & Control Proc, 5 Radio Str, Vladivostok 690041, Russia

[2] Far Eastern State Univ, Vladivostok 690600, Russia

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2006年 / 4卷

关键词：

Film growth; Iron silicide; Chromium silicide; Differential Reflectance Spectroscopy; Atomic Force Microscopy; Si(111);

D O I：

10.1380/ejssnt.2006.319

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The results of investigations devoted to a search of conditions of the simultaneous metal and semiconductor silicides formation being important problem for microelectronics are presented in the paper. The Si(111)-Fe and Si(111)-Cr systems having been chosen due to low lattice misfit of silicides observed in they were studied by the methods of Differential Reflection Spectroscopy (DRS) and Atomic Force Microscopy (AFM). The new method (Restored Standard method) having been invented for DRS studying of solid phase epitaxy (SPE) in these systems is first noted. The detailed description of processes occurred in the investigated systems and optimal conditions for the simultaneous metal and semiconductor silicides formation are presented in paper.

引用

页码：319 / 329

页数：11

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