A SURFACE SPECTROSCOPIC STUDY OF METAL SUPPORT INTERACTIONS - MODEL STUDIES OF COPPER ON THIN SIO2-FILMS

被引：53

作者：

XU, XP ^{[1
]}

HE, JW ^{[1
]}

GOODMAN, DW ^{[1
]}

机构：

[1] TEXAS A&M UNIV SYST,DEPT CHEM,COLL STN,TX 77843

来源：

SURFACE SCIENCE | 1993年 / 284卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(93)90528-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The metal-support interactions for a model silica-supported copper catalyst have been studied using temperature-programmed desorption, X-ray photoelectron and infrared reflection-absorption spectroscopies under ultrahigh vacuum conditions. The model catalyst support was prepared by synthesizing a thin SiO2 film (approximately 100 angstrom) on a Mo(110) surface. Copper was then evaporated onto the SiO2 films. A small amount of copper (< 0.1 monolayer) is partially oxidized at the Cu/SiO2 interface with the remainder forming 3D-clusters. The desorption energy of copper from the SiO2 is found to depend markedly on copper coverage (cluster size).

引用

收藏

页码：103 / 108

页数：6

相关论文

共 50 条

[21] THERMAL SIO2-FILMS - A STUDY BY HRTEM [J].

SRIVASTAVA, JK ;

WAGNER, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :C196-C196

[22] SPECTROSCOPIC ELLIPSOMETRY STUDIES OF VERY THIN THERMALLY GROWN SIO2-FILMS - INFLUENCE OF OXIDATION PROCEDURE ON OXIDE QUALITY AND STRESS [J].

BOULTADAKIS, S ;

LOGOTHETIDIS, S ;

PAPADOPOULOS, A ;

VOUROUTZIS, N ;

ZORBA, P ;

GIRGINOUDI, D ;

THANAILAKIS, A .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :4164-4173

[23] INTERACTIONS OF SILICON POINT-DEFECTS WITH SIO2-FILMS [J].

DUNHAM, ST .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :685-696

[24] 2-CHANNEL SPECTROSCOPIC POLARIZATION MODULATION ELLIPSOMETRY - A NEW TECHNIQUE FOR THE ANALYSIS OF THIN SIO2-FILMS [J].

JELLISON, GE .

THIN SOLID FILMS, 1991, 206 (1-2) :294-299

[25] NOVEL MECHANISM FOR TUNNELING AND BREAKDOWN OF THIN SIO2-FILMS [J].

RICCO, B ;

AZBEL, MY ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1983, 51 (19) :1795-1798

[26] THERMAL EMISSION OF TRAPPED HOLES IN THIN SIO2-FILMS [J].

LU, Y ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) :3156-3159

[27] IMPACT IONIZATION AND POSITIVE CHARGE IN THIN SIO2-FILMS [J].

SHATZKES, M ;

AVRON, M .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3192-3202

[28] PROPERTIES OF THIN SIO2-FILMS WITH POLYSILICON DEPOSITED INSITU [J].

PAN, P ;

BERRY, W ;

KERMANI, A ;

LIAO, J .

SOLID STATE TECHNOLOGY, 1990, 33 (01) :37-38

[29] FAILURE DISTRIBUTIONS AND AREA TRANSFORMATION OF THIN SIO2-FILMS [J].

DITALI, A ;

BLACK, W .

ELECTRONICS LETTERS, 1994, 30 (06) :487-488

[30] THIN SIO2-FILMS NITRIDED IN N2O [J].

BELLAFIORE, N ;

PIO, F ;

RIVA, C .

MICROELECTRONICS JOURNAL, 1994, 25 (07) :495-500

← 1 2 3 4 5 →