ON PREPARATION OF EPITAXIAL FILMS OF III-V COMPOUNDS

被引：6

作者：

JAIN, VK

SHARMA, SK

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 08期

关键词：

D O I：

10.1016/0038-1101(70)90125-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1145 / &

共 62 条

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[7] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM [J].

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[8]

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[9]

CONARD RW, 1967, SOLID STATE ELECTRON, V10, P507

[10] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J].

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