ELECTRONIC STATES OF IMPURITIES LOCATED AT OR NEAR SEMICONDUCTOR-INSULATOR INTERFACES

被引:47
作者
LIPARI, NO
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期
关键词
D O I
10.1116/1.569798
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1412 / 1416
页数:5
相关论文
共 11 条
[1]  
BELL RJ, 1967, SURF SCI, V1, P293
[2]  
FOWLER AB, SURF SCI
[3]  
HARTSTEIN A, 1976, 13TH P INT C PHYS SE, P741
[4]  
KARPUSHIN AA, 1970, FIZ TVERD TELA+, V11, P1748
[5]   CARRIER CONCENTRATION IN INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J].
LAUR, J ;
JAYADEVAIAH, TS .
SOLID-STATE ELECTRONICS, 1973, 16 (05) :644-646
[6]   NODAL HYDROGENIC WAVE FUNCTIONS OF DONORS ON SEMICONDUCTOR SURFACES [J].
LEVINE, JD .
PHYSICAL REVIEW, 1965, 140 (2A) :A586-&
[7]   THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS [J].
LIPARI, NO ;
ALTARELLI, M .
PHYSICAL REVIEW B, 1977, 15 (10) :4883-4895
[8]  
LIPARI NO, UNPUBLISHED
[9]  
MARTIN BR, UNPUBLISHED
[10]   EXCITON GROUND-STATE IN STRONGLY ANISOTROPIC CRYSTALS [J].
POLLMANN, J .
SOLID STATE COMMUNICATIONS, 1976, 19 (04) :361-364