EFFECT OF UNIAXIAL-STRESS ON FREE AND BISMUTH-BOUND EXCITONS IN INP

被引：6

作者：

WEBER, G

RUHLE, W

机构：

[1] Physikalisches Institut, Universität Stuttgart

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 92卷 / 02期

关键词：

D O I：

10.1002/pssb.2220920210

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The reduction of the shear deformation potentials of holes bound to the isolectronic impurity Bi in InP is determined by piezoluminescence. It is compared with the corresponding reduction for holes bound to the Coulomb‐type acceptors C and Zn. The theory for an effective mass acceptor describes well the cases of C and Zn. However, additional effects as local strain and Stark fields must be involved in the case of Bi leading to an extremely large reduction of the deformation potentials. No change in binding energy with applied stress as well as no exchange splitting of the Bi‐bound exciton can be detected within experimental accuracy. The stress dependence of the free exciton reflectance reveals values for the band deformation potentials and a value of 0.07 meV for the exchange splitting of the free exciton in InP. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：425 / 431

页数：7

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