THE KINETIC ASPECTS OF ORDERING IN GAAS1-XSBX GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:71
作者
JEN, HR
JOU, MJ
CHERNG, YT
STRINGFELLOW, GB
机构
关键词
D O I
10.1016/0022-0248(87)90219-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:175 / 181
页数:7
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共 30 条
[1]   GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
BEDAIR, SM ;
TIMMONS, ML ;
CHIANG, PK ;
SIMPSON, L ;
HAUSER, JR .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) :959-972
[2]   MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].
CHANG, CA ;
LUDEKE, R ;
CHANG, LL ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761
[3]   GAAS1-XSBX GROWTH BY OMVPE [J].
CHERNG, MJ ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) :799-813
[4]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].
CHERNG, MJ ;
STRINGFELLOW, GG ;
COHEN, RM .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679
[5]   OMVPE GROWTH OF THE METASTABLE-III/V ALLOY GAAS0.5SB0.5 [J].
CHERNG, MJ ;
CHERNG, YT ;
JEN, HR ;
HARPER, P ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :79-85
[6]  
CHERNG MJ, 1984, APPL PHYS LETT, V44, P550
[7]   BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
CASEY, HC ;
FOY, PW .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :397-399
[8]   THE ORGANO-METALLIC VPE GROWTH OF GASB AND GAAS1-XSBX USING TRIMETHYLANTIMONY [J].
COOPER, CB ;
SAXENA, RR ;
LUDOWISE, MJ .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) :1001-1010
[9]  
EDINGTON JW, 1976, PRACTICAL ELECTRON M, P97
[10]   GALLIUM-ARSENIDE ANTIMONIDE - POSSIBILITY OF LATTICE-MATCHED LPE GROWTH ON INP SUBSTRATES [J].
FONSTAD, CG ;
QUILLEC, M ;
GARONE, S .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5920-5923