ELECTRONIC BAND-STRUCTURE OF MONOLAYER SB ON GAP(110)

被引:5
作者
WHITTLE, R
DUDZIK, E
MCGOVERN, IT
HEMPELMANN, A
NOWAK, C
ZAHN, DRT
CAFOLLA, A
BRAUN, W
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY
[2] UNIV WALES COLL CARDIFF,COLL CARDIFF,DEPT PHYS,CARDIFF CF1 3TH,WALES
[3] BESSY,W-1000 BERLIN 33,GERMANY
关键词
D O I
10.1016/0368-2048(94)80011-1
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
We have used angle resolved ultra violet photoelectron spectroscopy (ARUPS) with synchrotron radiation to map the two dimensional electronic bandstructure of monolayer Sb on GaP(110). The dispersion of the features in the valence band was followed along the four symmetry directions of the surface Brillouin zone using sets of spectra taken at several photon energies. Five bands originating from surface states were then identified and selection rules based on polarisation and emission geometry were used to probe the nature of these states. The experimental results are compared with recent tight-binding and pseudopotential calculations for Sb/GaP(110).
引用
收藏
页码:399 / 405
页数:7
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