CONTROL OF RESISTIVITY, MICROSTRUCTURE, AND STRESS IN ELECTRON-BEAM EVAPORATED TUNGSTEN FILMS

被引：44

作者：

SINHA, AK ^{[1
]}

SMITH, TE ^{[1
]}

SHENG, TT ^{[1
]}

AXELROD, NN ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 03期

关键词：

D O I：

10.1116/1.1317085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental study is made of the use of the electron beam evaporation technique for obtaining relatively pure tungsten films suitable for gate material in refractory metal-oxide-semiconductor devices. Films produced had a resistivity of 7-8 mu ohm-cm when deposited on substrates at 500-700 C. Such films have small grain size, small tensile stress and high microstructural perfection. Films deposited at lower temperatures had resistivities of 10-15 mu ohm-cm.

引用

页码：436 / 444

页数：9

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