ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM

被引：53
|
作者：
ARISTOV, VY
LELAY, G
SOUKIASSIAN, P
HRICOVINI, K
BONNET, JE
OSVALD, J
OLSSON, O
机构：
[1] CENS,CEA,SERV RECH SURFACES & IRRADIAT MAT,F-91191 GIF SUR YVETTE,FRANCE
[2] UNIV PARIS 11,DEPT PHYS,F-91405 ORSAY,FRANCE
[3] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE
[4] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
[5] UNIV AIX MARSEILLE 1,UFR SCI MAT,F-13331 MARSEILLE 3,FRANCE
[6] UNIV CERGY PONTOISE,F-95806 CERGY,FRANCE
[7] SLOVAK ACAD SCI,INST ELECT ENGN,CS-84239 BRATISLAVA,SLOVAKIA
来源：
EUROPHYSICS LETTERS | 1994年 / 26卷 / 05期
关键词：
D O I：
10.1209/0295-5075/26/5/007
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The room temperature deposition of small amounts of Cs on the InAs(110) surface induces the highest Fermi-level pinning position (approximately 0.6 eV) above the conduction band minimum ever met for any semiconductor. The Fermi-level movement is monitored by core level photoemission spectroscopy using synchrotron radiation. This striking behaviour is explained in terms of donor-type surface states induced by few Cs atoms present on InAs(110) and suggests the existence of a two-dimensional electron gas at the surface.
引用
收藏
页码：359 / 364
页数：6
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