PULSED-LASER CRYSTALLIZATION AND DOPING FOR THE FABRICATION OF HIGH-QUALITY POLY-SI TFTS

被引：37

作者：

FOGARASSY, E

PATTYN, H

ELLIQ, M

SLAOUI, A

PREVOT, B

STUCK, R

DEUNAMUNO, S

MATHE, EL

机构：

[1] IMEC,B-3030 LOUVAIN,BELGIUM

[2] INST NATL PHYS NUCL & PHYS PARTICULES,CTR RECH NUCL,PHASE GRPM LAB,CNRS,UPR 292,F-67037 STRASBOURG 2,FRANCE

[3] LAB MET PHYS,CNRS,URA 131,F-86022 POITIERS,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 69卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90510-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We review the various applications of pulsed lasers, working in the nanosecond regime, to prepare high-quality poly-Si TFTs. It is shown that the best device performances (field-effect mobilities in excess of 140 cm2/V - s) are achieved by pulsed excimer laser crystallization of unhydrogenated amorphous Si thin films. In addition, for source and drain formation, we demonstrate that the excimer laser induced diffusion of dopant from a solid source (spin-on phosphorus-doped silicate glass) is very attractive to achieve good electrical properties of the n-channel TFTs.

引用

收藏

页码：231 / 241

页数：11

相关论文

共 32 条

[11] UV LASER INCORPORATION OF DOPANTS INTO SILICON - COMPARISON OF 2 PROCESSES [J].

FOGARASSY, EP ;

LOWNDES, DH ;

NARAYAN, J ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2167-2173

[12] RAMAN, TRANSMISSION ELECTRON-MICROSCOPY, AND CONDUCTIVITY MEASUREMENTS IN MOLECULAR-BEAM DEPOSITED MICROCRYSTALLINE SI AND GE - A COMPARATIVE-STUDY [J].

GONZALEZHERNANDEZ, J ;

AZARBAYEJANI, GH ;

TSU, R ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1350-1352

[13]

KAWACHI G, 1990, 22ND C SOL STAT DEV, P971

[14] POLYCRYSTALLINE SI THIN-FILM TRANSISTORS USING THERMALLY CRYSTALLIZED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION A-SI FILMS FOR THE CHANNEL LAYER AND P-DOPED MICROCRYSTALLINE SI FILMS FOR THE SOURCE AND DRAIN LAYERS [J].

KOBAYASHI, K ;

NIJS, J ;

MERTENS, R .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2541-2546

[15] ENLARGEMENT OF POLY-SI FILM GRAIN-SIZE BY EXCIMER LASER ANNEALING AND ITS APPLICATION TO HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTOR [J].

KURIYAMA, H ;

KIYAMA, S ;

NOGUCHI, S ;

KUWAHARA, T ;

ISHIDA, S ;

NOHDA, T ;

SANO, K ;

IWATA, H ;

KAWATA, H ;

OSUMI, M ;

TSUDA, S ;

NAKANO, S ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3700-3703

[16]

LAM HW, 1984, MATER RES SOC S P, V33

[17] INFLUENCE OF HYDROGEN ON THE STRUCTURE AND SURFACE-MORPHOLOGY OF PULSED ARF EXCIMER LASER CRYSTALLIZED AMORPHOUS-SILICON THIN-FILMS [J].

MATHE, EL ;

NAUDON, A ;

ELLIQ, M ;

FOGARASSY, E ;

DEUNAMUNO, S .

APPLIED SURFACE SCIENCE, 1992, 54 :392-400

[18] HIGH-PERFORMANCE LOW-TEMPERATURE POLY-SI N-CHANNEL TFTS FOR LCD [J].

MIMURA, A ;

KONISHI, N ;

ONO, K ;

OHWADA, J ;

HOSOKAWA, Y ;

ONO, YA ;

SUZUKI, T ;

MIYATA, K ;

KAWAKAMI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :351-359

[19]

NISHIMURA T, 1984, MATER RES SOC S P, V33, P221

[20]

PATTYN H, 1990, 22ND 1990 INT C SOL, P959

← 1 2 3 4 →