PULSED-LASER CRYSTALLIZATION AND DOPING FOR THE FABRICATION OF HIGH-QUALITY POLY-SI TFTS

被引：37

作者：

FOGARASSY, E

PATTYN, H

ELLIQ, M

SLAOUI, A

PREVOT, B

STUCK, R

DEUNAMUNO, S

MATHE, EL

机构：

[1] IMEC,B-3030 LOUVAIN,BELGIUM

[2] INST NATL PHYS NUCL & PHYS PARTICULES,CTR RECH NUCL,PHASE GRPM LAB,CNRS,UPR 292,F-67037 STRASBOURG 2,FRANCE

[3] LAB MET PHYS,CNRS,URA 131,F-86022 POITIERS,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 69卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90510-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We review the various applications of pulsed lasers, working in the nanosecond regime, to prepare high-quality poly-Si TFTs. It is shown that the best device performances (field-effect mobilities in excess of 140 cm2/V - s) are achieved by pulsed excimer laser crystallization of unhydrogenated amorphous Si thin films. In addition, for source and drain formation, we demonstrate that the excimer laser induced diffusion of dopant from a solid source (spin-on phosphorus-doped silicate glass) is very attractive to achieve good electrical properties of the n-channel TFTs.

引用

页码：231 / 241

页数：11

共 32 条

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Bachrach R. Z., 1991, SPRINGER P PHYS, V54, P330

[2] LOW-TEMPERATURE CRYSTALLIZATION OF AMORPHOUS-SILICON USING AN EXCIMER LASER [J].