POSITRON-ANNIHILATION STUDY OF P IMPLANTED SI

被引：5

作者：

ASOKAKUMAR, P ^{[1
]}

SFERLAZZO, P ^{[1
]}

AU, HL ^{[1
]}

LYNN, KG ^{[1
]}

机构：

[1] EATON CORP,DIV SED,BEVERLY,MA 01915

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95020-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High-energy ion implantation (above 200 keV) is now commonly used in a variety of VLSI processes. The high energy required for these implants is often achieved by implanting multiply charged ions, which inevitably brings in the problem of low-energy ion contamination. The low-energy contamination is difficult to diagnose and detect. Positron annihilation spectroscopy is used to examine the defect distributions in these high energy implants with varying degrees of contamination.

引用

页码：89 / 93

页数：5

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