INFRARED ABSORPTION IN NEUTRON IRRADIATED SILICON

被引:6
作者
FAN, HY
RAMDAS, AK
机构
关键词
D O I
10.1016/0022-3697(59)90334-8
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:272 / 274
页数:3
相关论文
共 11 条
[1]  
BECKER M, 1952, PHYS REV, V85, P730
[2]   INFRA-RED ABSORPTION IN SEMICONDUCTORS [J].
FAN, HY .
REPORTS ON PROGRESS IN PHYSICS, 1956, 19 :107-155
[3]  
FAN HY, 1958, B AM PHYS SOC 2, V3, P129
[4]  
HILL DE, 1958, B AM PHYS SOC, V3, P142
[5]  
LONGO TA, 1957, B AM PHYS SOC 2, V2, P355
[6]  
LONGO TA, 1957, B AM PHYS SOC 2, V2, P156
[7]  
LONGO TA, 1957, THESIS
[8]   EFFECT OF NEUTRON IRRADIATION ON INFRARED ABSORPTION IN SILICON [J].
SPITZER, WG ;
FAN, HY .
PHYSICAL REVIEW, 1958, 109 (03) :1011-1012
[9]   ENERGY LEVELS IN ELECTRON-BOMBARDED SILICON [J].
WERTHEIM, GK .
PHYSICAL REVIEW, 1957, 105 (06) :1730-1735
[10]   ELECTRON-BOMBARDMENT DAMAGE IN SILICON [J].
WERTHEIM, GK .
PHYSICAL REVIEW, 1958, 110 (06) :1272-1279