NEGATIVE CAPACITANCE AT METAL-SEMICONDUCTOR INTERFACES - REPLY

被引：3
作者：
WU, X
EVANS, HL
YANG, ES
机构：
[1] HARRIS SEMICOND INC,MELBOURNE,FL 32905
[2] COLUMBIA UNIV,NEW YORK,NY 10027
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 02期
关键词：
D O I：
10.1063/1.349678
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The origin of the excess admittance at a forward-biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority-carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points that the minority-carrier effect cannot account for the experimental observations.
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页码：1089 / 1089
页数：1
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