ENERGY-LOSS RATE OF HOT-ELECTRONS IN N-INSB IN THE EXTREME QUANTUM LIMIT AT LOW-TEMPERATURES

被引：1
作者：
SARKAR, CK
SANTRA, K
机构：
[1] Department of Electronics and Telecommunication Engineering, Jadavpur University, Calcutta
来源：
PHYSICS LETTERS A | 1991年 / 153卷 / 6-7期
关键词：
D O I：
10.1016/0375-9601(91)90965-B
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The energy loss rate of hot electrons in n-InSb in the extreme quantum limit at low temperatures has been calculated to interpret the experimental results. The theoretical calculation includes the band non-parabolicity, the non-equipartition of phonons and the Landau level broadening due to electron-impurity interactions. The effect of free carrier screening on the electron-phonon interactions is also included. The modification of free carrier screening due to magnetic quantisation has also been considered. The energy loss rate is calculated assuming that the acoustic phonon scattering via a deformation potential and piezoelectric scattering are the dominant loss mechanisms at low temperatures. The theoretical values are found to be higher than the experimental values. The modified free carrier screening due to magnetic quantisation overestimates the energy loss rate compared to the classical Debye screening.
引用
收藏
页码：390 / 394
页数：5
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