MINORITY-ELECTRON MOBILITY IN P-TYPE GAAS

被引:21
作者
ITO, H
ISHIBASHI, T
机构
关键词
D O I
10.1063/1.343150
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5197 / 5199
页数:3
相关论文
共 9 条
[1]   ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT [J].
AHRENKIEL, RK ;
DUNLAVY, DJ ;
GREENBERG, D ;
SCHLUPMANN, J ;
HAMAKER, HC ;
MACMILLAN, HF .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :776-778
[2]  
ITO H, 1986, I PHYS C SER, V79, P607
[3]  
LAGUNOVA TS, 1985, SOV PHYS SEMICOND+, V19, P71
[4]   ELECTRON-MOBILITY IN P-TYPE GAAS [J].
NATHAN, MI ;
DUMKE, WP ;
WRENNER, K ;
TIWARI, S ;
WRIGHT, SL ;
JENKINS, KA .
APPLIED PHYSICS LETTERS, 1988, 52 (08) :654-656
[5]  
NELSON RJ, 1979, I PHYS C SER, V45, P256
[6]   HIGH ELECTRON-MOBILITY IN P-TYPE III-V COMPOUND SEMICONDUCTORS [J].
OTSUKA, E .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (02) :292-296
[7]   ELECTRON TRANSPORT IN GAAS [J].
RODE, DL ;
KNIGHT, S .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2534-&
[8]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, P34
[9]   MINORITY-CARRIER MOBILITY IN P-TYPE GAAS [J].
WALUKIEWICZ, W ;
LAGOWSKI, J ;
JASTRZEBSKI, L ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5040-5042