EPITAXIAL-GROWTH OF SILICON-CARBIDE LAYERS BY SUBLIMATION SANDWICH METHOD .2. STRUCTURAL DEFECTS AND GROWTH-MECHANISM

被引：0

作者：

MOKHOV, EN

SHULPINA, IL

TREGUBOVA, AS

VODAKOV, YA

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1981年 / 16卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：879 / 886

页数：8

共 14 条

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[9] PREPARATION OF NITROGEN-DOPED AND PHOSPHORUS-DOPED EPITAXIAL ALPHA-SIC LAYERS ON SILICON-CARBIDE CRYSTALS [J].

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[10] PREPARATION OF EPITAXIAL SILICON-CARBIDE LAYERS DOPED WITH GROUP-3 AND GROUP-5 ELEMENTS ON ALPHA-SIC CRYSTALS [J].

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