CORRELATED BARRIER HOPPING IN NIO FILMS

被引：137

作者：

LUNKENHEIMER, P ^{[1
]}

LOIDL, A ^{[1
]}

OTTERMANN, CR ^{[1
]}

BANGE, K ^{[1
]}

机构：

[1] SCHOTT GLASWERKE,RES & DEV,W-6500 MAINZ,GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.44.5927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10(9) Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation.

引用

页码：5927 / 5930

页数：4

共 28 条

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