A SENSITIVE OPTICALLY-EXCITED RESONATOR PRESSURE SENSOR

被引：21

作者：

THORNTON, KEB ^{[1
]}

UTTAMCHANDANI, D ^{[1
]}

CULSHAW, B ^{[1
]}

机构：

[1] UNIV STRATHCLYDE,ROYAL COLL,DEPT ELECTR & ELECT ENGN,GLASGOW G1 1XW,SCOTLAND

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 24卷 / 01期

关键词：

D O I：

10.1016/0924-4247(90)80042-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel pressure-sensitive micromechanical resonator sensor has been fabricated by anisotropic etching of silicon. The resonator is driven into transverse vibration when a laser beam, intensity modulated at the natural frequency of the resonator, is incident at its centre. A separate heterodyne interferometer is used to probe the vibration. Pressure applied to the sensor causes a change in its natural frequency and we report that the pressure sensitivity of the resonance frequency changes from 3.5%/bar to 31%/bar for different sensor parameters. © 1990.

引用

页码：15 / 19

页数：5

共 5 条

[1] OPTICAL ACTIVATION OF A SILICON VIBRATING SENSOR [J].

ANDRES, MV ;

FOULDS, KWH ;

TUDOR, MJ .

ELECTRONICS LETTERS, 1986, 22 (21) :1097-1099

[2]

SMITS JG, 1985, 3RD P INT C SOL STAT, P93

[3]

Timoshenko S., 1987, THEORY PLATES SHELLS, P51

[4] OPTICALLY-EXCITED RESONANT DIAPHRAGM PRESSURE SENSOR [J].

UTTAMCHANDANI, D ;

THORNTON, KEB ;

NIXON, J ;

CULSHAW, B .

ELECTRONICS LETTERS, 1987, 23 (04) :152-153

[5] OPTICALLY ACTIVATED VIBRATIONS IN A MICROMACHINED SILICA STRUCTURE [J].

VENKATESH, S ;

CULSHAW, B .

ELECTRONICS LETTERS, 1985, 21 (08) :315-317

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