ELECTRON-HOLE SCATTERING AND MINORITY-ELECTRON TRANSPORT IN IN0.53GA0.47AS, INAS, AND INP - THE ROLE OF THE SPLIT-OFF BAND

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作者
SADRA, K
MAZIAR, CM
STREETMAN, BG
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FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 1989年 / 1144卷
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:108 / 117
页数:10
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[21]   Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure [J].
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SCHMITZ, D ;
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RAZEGHI, M .
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Hudait, M ;
Lin, Y ;
Kim, H ;
Ringel, SA ;
Lu, W .
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