CYCLOTRON RESONANCE AND HALL EXPERIMENTS WITH HIGH-PURITY EPITAXIAL GAAS

被引：37

作者：

CHAMBERLAIN, JM

STRADLING, RA

机构：

[1] Clarendon Laboratory, Oxford

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 17期

关键词：

D O I：

10.1016/0038-1098(69)90193-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Cyclotron resonance and cross-modulation experiments at 2 and 1 mm wavelength with an ultra-high purity epitaxial film (ND - NA = 1.3 × 1013 cm-3) of GaAs show that the effective mass at the bottom of the k = 0 conduction band is (0.0648 ± 0.0015)m0 at 11°K with no evidence for any change with temperature in the range from 4 to 115°K. The cyclotron resonance lines sharpen continuously as the temperature is lowered in contrast to the Hall mobility which has a maximum value of about 250,000 cm2/Vs at 50°K. The Hall measurements also show that the activation energy of the shallow donor is 0.0048 ± 0.0002 eV. © 1969.

引用

页码：1275 / +

页数：1

共 16 条

[1]

AKASAKI I, 1968, P INT C PHYSICS SEMI

[2] CYCLOTRON RESONANCE AT 4 MM WAVELENGTH [J].

BAGGULEY, DM ;

STRADLING, RA .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (504) :1078-&

[3]

DEMEISS WM, 1965, THESIS HARVARD U

[4] PLASMA RESONANCE IN CRYSTALS - OBSERVATIONS AND THEORY [J].

DRESSELHAUS, G ;

KIP, AF ;

KITTEL, C .

PHYSICAL REVIEW, 1955, 100 (02) :618-625

[5] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[6] THERMOELECTRIC CYCLOTRON RESONANCE IN GERMANIUM [J].

FISHER, PD ;

WAGNER, PE .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2255-&

[7]

MEARS AL, SOLID STATE COMMUN, V7

[8] INFRARED CYCLOTRON RESONANCE ABSORPTION IN N-TYPE GAAS [J].

PALIK, ED ;

STEVENSON, JR ;

WALLIS, RF .

PHYSICAL REVIEW, 1961, 124 (03) :701-&

[9]

PILLER H, 1966, P INT C PHYS SEMICON, P206

[10] IMPACT IONIZATION BREAKDOWN OF N-TYPE EPITAXIAL GAAS AT LIQUID HELIUM TEMPERATURES [J].

REYNOLDS, RA .

SOLID-STATE ELECTRONICS, 1968, 11 (04) :385-&

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