Some properties of fused quartz and other forms of silicon-dioxide

被引：6
|
作者：
Watson, HL
机构：
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1926年 / 9卷 / 08期
关键词：
D O I：
10.1111/j.1151-2916.1926.tb17197.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：511 / 534
页数：24
相关论文
共 50 条
  • [1] SILICON-DIOXIDE ELECTRET TRANSDUCER
    HOHM, D
    GERHARDMULTHAUPT, R
    JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1984, 75 (04): : 1297 - 1298
  • [2] Theoretical analysis of laser-induced periodic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces
    Lu, YF
    Yu, JJ
    Choi, WK
    APPLIED PHYSICS LETTERS, 1997, 71 (23) : 3439 - 3440
  • [3] REVIEW OF CARRIER INJECTION IN THE SILICON SILICON-DIOXIDE SYSTEM
    SANCHEZ, JJ
    DEMASSA, TA
    IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (03): : 377 - 389
  • [4] Silicon-dioxide waveguides with low birefringence
    de Peralta, LG
    Bernussi, AA
    Temkin, H
    Borhani, MM
    Doucette, DE
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (07) : 874 - 879
  • [5] THERMAL CONDUCTION IN METALLIZED SILICON-DIOXIDE LAYERS ON SILICON
    KADING, OW
    SKURK, H
    GOODSON, KE
    APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1629 - 1631
  • [6] THE SILICON SILICON-DIOXIDE SYSTEM - ITS MICROSTRUCTURE AND IMPERFECTIONS
    HELMS, CR
    POINDEXTER, EH
    REPORTS ON PROGRESS IN PHYSICS, 1994, 57 (08) : 791 - 852
  • [7] Model for Oxygen Recombination on Silicon-Dioxide Surfaces
    Seward, W. A.
    Jumper, E. J.
    JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER, 1991, 5 (03) : 284 - 291
  • [8] Comparison of Silicon and Silicon-Dioxide Sputtering by a Focused Ion Beam
    Rumyantsev, A. V.
    Borgardt, N. I.
    SEMICONDUCTORS, 2024, 58 (13) : 1097 - 1103
  • [9] COPPER PRECIPITATION AT THE SILICON SILICON-DIOXIDE INTERFACE - ROLE OF OXYGEN
    CORREIA, A
    BALLUTAUD, D
    MAURICE, JL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (3A): : 1217 - 1222
  • [10] ELECTRICAL CHARACTERISTICS OF TANTALUM PENTOXIDE SILICON-DIOXIDE SILICON STRUCTURES
    SEKI, S
    UNAGAMI, T
    TSUJIYAMA, B
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 199 - 202
12345