THE INFLUENCE OF QUANTIZATION ON THE SPACE-CHARGE LAYER CAPACITANCE OF SI IN STRONG ACCUMULATION

被引：5
作者：
FRANTSUZOV, AA
OKHONIN, SA
POGOSOV, AG
机构：
[1] Acad of Sciences of the USSR, Novosibirsk, USSR, Acad of Sciences of the USSR, Novosibirsk, USSR
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1986年 / 136卷 / 01期
关键词：
D O I：
10.1002/pssb.2221360127
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：241 / 249
页数：9
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