FUNDAMENTAL QUANTUM 1/F NOISE IN SEMICONDUCTOR-DEVICES

被引:61
作者
HANDEL, PH
机构
[1] Department of Physics and Astronomy, University of Missouri at St. Louis, St. Louis
基金
美国国家科学基金会;
关键词
D O I
10.1109/16.333820
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The quantum 1/f noise theory has been developed in the last two decades and has been applied to 1/f noise suppression in various electronic devices. This theory derives fundamental quantum fluctuations present in the elementary processes of physics at the level of the quantum mechanical cross sections and process rates. This paper demonstrates the basic simplicity of the theory with an elementary physical derivation followed by a short derivation of the conventional quantum 1/f effect in second quantization, for an arbitrary number of particles N defining the scattered current in the final state. A new derivation of the coherent quantum 1/f effect is also included. No adjustable parameters are present in the quantum 1/f theory. Practical applications to semiconductor materials, pn junctions, SQUID's and quartz resonators are presented. Optimal design principles based on the quantum 1/f theory are described and explained.
引用
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页码:2023 / 2033
页数:11
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