TEM OF DISLOCATIONS UNDER HIGH STRESS IN GERMANIUM AND DOPED SILICON

被引：28

作者：

ALEXANDER, H

EPPENSTEIN, H

GOTTSCHALK, H

WENDLER, S

机构：

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00241.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：13 / 21

页数：9

共 14 条

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[2]

ALEXANDER H, 1978, J PHYSIQUE C, V2, P114

[3]

Alexander H, 1974, J PHYS C SOLID STATE, VC7, P173

[4] DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON-MICROSCOPY [J].

COCKAYNE, DJH ;

HONS, A .

JOURNAL DE PHYSIQUE, 1979, 40 :11-18

[5]

FOLL H, 1978, 3083 CORN U REP

[6] MEASUREMENTS OF THE DISLOCATION VELOCITIES IN SILICON [J].

GEORGE, A .

JOURNAL DE PHYSIQUE, 1979, 40 :133-137

[7] MOTION OF PARTIAL DISLOCATIONS [J].

GOTTSCHALK, H .

JOURNAL DE PHYSIQUE, 1979, 40 :127-131

[8]

HIRTH JP, 1968, THEORY DISLOCATIONS, P359

[9] DISLOCATIONS IN THE DIAMOND LATTICE [J].

HORNSTRA, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141

[10] DISSOCIATED DISLOCATIONS IN GERMANIUM [J].

MEINGAST, R ;

ALEXANDER, H .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 17 (01) :229-236

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