THE MOVPE GROWTH AND DOPING OF ZNTE

被引：46

作者：

KUHN, W

WAGNER, HP

STANZL, H

WOLF, K

WORLE, K

LANKES, S

BETZ, J

WORZ, M

LICHTENBERGER, D

LEIDERER, H

GEBHARDT, W

TRIBOULET, R

机构：

[1] Inst. fur Festkorperphysik, Regensburg Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 9A期

关键词：

D O I：

10.1088/0268-1242/6/9A/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc telluride layers have been grown on (100) GaAs, GaSb and ZnTe substrates at 350-degrees-C with atmospheric pressure MOVPE. Diisopropyltelluride, dimethylzinc-triethylamine and diethylzinc were chosen as metallorganic precursors. The samples were characterized by photoluminescence at 2 K and the Hall effect. In the PL spectra the light hole, heavy hole and bound exciton transitions are well resolved. Most of the transitions have been assigned. The partial pressure ratios of the alkyls were optimized. The influence of composition and stoichiometry of the substrates on the purity of the ZnTe is revealed. Various alkyls as sources of As, Bi, Ga, In and I were investigated for their suitability as p- or n-type dopants. It is shown that tetraethylbiarsine and ethyliodide are promising alkyls for p- and n-type doping of ZnTe.

引用

页码：A105 / A108

页数：4