CHARGE STATE DENSITY PROFILING OF EL2 DEEP DONOR IN GAAS USING SELECTIVE EXCITATION LUMINESCENCE

被引：2

作者：

TAJIMA, M

IINO, T

机构：

[1] ELECTROTECH LAB,TSUKUBA 305,JAPAN

[2] SUMITOMO MET MIN CO LTD,ELECTR MAT LAB,OHME 198,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.L841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L841 / L844

页数：4

共 12 条

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[10]

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