GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111)

被引：183

作者：

TUNG, RT

BEAN, JC

GIBSON, JM

POATE, JM

JACOBSON, DC

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：684 / 686

页数：3

共 13 条

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[3] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J].

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[4]

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[5]

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[7]

MATTHEWS JW, 1975, EPITAXIAL GROWTH, pCH7

[8] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

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[9]

Poate J M, 1978, THIN FILMS INTERDIFF

[10] FORMATION OF A DOUBLE-HETERO SI-COSI2-SI STRUCTURE USING MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :49-54

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