MODELING OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR

被引：1
作者：
SHENG, HY
CHUA, SJ
机构：
[1] Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期
关键词：
D O I：
10.1088/0268-1242/8/8/017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analysed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.
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页码：1590 / 1595
页数：6
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