TRANSPARENT AND CONDUCTIVE GAN THIN-FILMS PREPARED BY AN ELECTRON-CYCLOTRON-RESONANCE PLASMA METALORGANIC CHEMICAL-VAPOR-DEPOSITION METHOD

Transparent and conductive GaN thin films have been prepared on glass substrates using the metalorganic chemical vapor deposition method utilizing electron cyclotron resonance plasma. A resistivity below 2 X 10(-2) OMEGA cm and a carrier concentration on the order of 10(20) cm-3 were obtained for oxygen-doped GaN thin films prepared at 350-degrees-C using triethylgallium in combination with either NH3 or N2 as source gases. A sheet resistance of 160 OMEGA/SQUARE and an averaged transmittance in the visible region of 80% were realized in a film 1100 nm thick. The thermal and chemical stability of GaN thin films are described.