A STEADY-STATE CONSTANT CAPACITANCE METHOD FOR THE CHARACTERIZATION OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS

被引：13
作者：
GRIMMEISS, HG
KULLENDORFF, N
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期
关键词：
D O I：
10.1063/1.327545
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5852 / 5854
页数：3
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