Complex dielectric function of CdTe/GaAs thin films studied by spectroscopic ellipsometry

被引:0
|
作者
Jeen, Gwangsoo [1 ]
Jo, Jaehyuk [1 ]
Park, Hyoyeol [2 ]
机构
[1] Busan Natl Univ, Dept Phys, Busan 680749, South Korea
[2] Ulsan Coll, Dept Semicond Applicat, Ulsan 680749, South Korea
关键词
CdTe thin film; Spectroscopic ellipsomerty; Dielectric function;
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5-5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the E-1,E-1 + Delta(1)and E-2 critical points. These energies were decreased with increasing thickness of CdTe thin films.
引用
收藏
页码:157 / 161
页数:5
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