DEFINED ETCHING OF CARBON-DIAMOND FILMS ON SILICON USING AN OXYGEN PLASMA WITH TITANIUM MASKING

被引：12

作者：

CHAN, KK ^{[1
]}

AMARATUNGA, GAJ ^{[1
]}

WONG, TKS ^{[1
]}

机构：

[1] UNIV CAMBRIDGE, DEPT ENGN, CAMBRIDGE CB2 1PZ, ENGLAND

来源：

DIAMOND AND RELATED MATERIALS | 1992年 / 1卷 / 2-4期

关键词：

D O I：

10.1016/0925-9635(92)90040-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A technique for pattern transfer onto carbon-diamond films deposited by radio-frequency plasma-enhanced chemical vapour deposition is reported. Such a technique involves standard photolithography processes and reactive ion etching by oxygen and is compatible with present day microelectronic technology. The patterns transferred are well defined with very good resolution. © 1992.

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页码：281 / 284

页数：4

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