FREQUENCY-DEPENDENT CONDUCTIVITY IN POLYCRYSTALLINE CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS

被引：17

作者：

MUTO, Y ^{[1
]}

SUGINO, T ^{[1
]}

KOBASHI, K ^{[1
]}

SHIRAFUJI, J ^{[1
]}

机构：

[1] KOBE STEEL LTD,ELECT RES LAB,NISHI KU,KOBE 67302,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 1A-B期

关键词：

POLYCRYSTALLINE CVD DIAMOND; FREQUENCY-DEPENDENT CONDUCTIVITY; HOPPING CONDUCTION; TRAP LEVELS;

D O I：

10.1143/JJAP.31.L4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Studies have been made on frequency-dependent electrical conduction in polycrystalline diamond films prepared by plasma-enhanced chemical vapor deposition (PECVD). It is found by ac conductivity measurements that the electrical conduction in annealed diamond films is attributed to frequency-independent band conduction in a low-frequency range, f0.8-dependent hopping conduction in a high-frequency range and thermal emission of carriers from trap levels. Activation energies of three trap levels are 0.62, 1.38 and 0.95 eV. The 0.62 and the 1.38 eV trap levels are passivated in hydrogenated diamond films.

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收藏

页码：L4 / L6

页数：3

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