RADIATIVE AND NONRADIATIVE RECOMBINATION OF BOUND EXCITONS IN GAP-N .1. TEMPERATURE BEHAVIOR OF ZERO-PHONON LINE AND PHONON SIDE-BAND OF BOUND EXCITONS - COMMENT

X. Zhang et al. [Phys. Rev. B 41, 1376 (1990)] argue that our data on the thermal quenching of excitons bound to nitrogen pairs in GaP [Sturge et al., Phys. Rev. B 15, 3169 (1977)] are incorrect for some pairs, and, from this, draw far-reaching conclusions about the exciton-phonon interaction. In this Comment we point out that the data on which Zhang et al. base their argument, which were previously reported by some of the authors in Chang (Zhang) et al. [Scientia Sinica (Ser. A) 25, 942 (1982)], have already been shown to be incorrect, and that our simple model accounts for all the reliable data.