HIGH HOLE MOBILITY IN MODULATION-DOPED AND STRAIN-CONTROLLED PARA-SI0.5GE0.5/GE/SI1-XSGEXS HETEROSTRUCTURES FABRICATED USING MOLECULAR-BEAM EPITAXY

被引：10

作者：

MURAKAMI, E

ETOH, H

NAKAGAWA, K

MIYAO, M

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, TOkyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

Heterostructure; Hole mobility; Modulation doping; Molecular beam epitaxy; Sige; Strain;

D O I：

10.1143/JJAP.29.L1059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

New heterostructures of modulation-doped p-Si0.5Ge0.5/Ge/Si1-XGeX are fabricated using molecular beam epitaxy. The strain in the Ge channel layer can be precisely controlled by changing the composition of the Si1-XGeX buffer layer. As a result, a large energy discontinuity (0.22 eV) in the valence band is realized. This leads to the realization of a high hole mobility (4500 cm2/V ·s) at 77 K. © 1990 The Japan Society of Applied Physics.

引用

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页码：L1059 / L1061

页数：3

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