DETERMINATION OF LIFETIME AND SURFACE RECOMBINATION VELOCITY OF P-N-JUNCTION SOLAR-CELLS AND DIODES BY OBSERVING TRANSIENTS

被引:16
作者
LINDHOLM, FA
LIOU, JJ
NEUGROSCHEL, A
JUNG, TW
机构
关键词
D O I
10.1109/T-ED.1987.22919
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:277 / 285
页数:9
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共 20 条
[1]  
CHAWLA BR, 1970, IEEE T ELECTRON DEV, V17, P178
[2]   INFLUENCE OF THE DOPANT DENSITY PROFILE ON MINORITY-CARRIER CURRENT IN SHALLOW, HEAVILY DOPED EMITTERS OF SILICON BIPOLAR-DEVICES [J].
CUEVAS, A ;
FOSSUM, JG ;
YOUNG, RT .
SOLID-STATE ELECTRONICS, 1985, 28 (03) :247-254
[3]  
Ghandhi S. K., 1977, SEMICONDUCTOR POWER, P100
[4]   MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS [J].
GONZALEZ, FN ;
NEUGROSCHEL, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :413-416
[5]   SOLAR-CELL MINORITY-CARRIER LIFETIME USING OPEN-CIRCUIT VOLTAGE DECAY [J].
GREEN, MA .
SOLAR CELLS, 1984, 11 (02) :147-161
[7]  
HAMILTON DJ, 1971, PRINCIPLES APPLICATI, pCH7
[8]   DISCUSSION OF THE VALIDITY OF KUNO RELATION TO DETERMINE THE BASE LIFETIME FROM A REVERSE RECOVERY EXPERIMENT [J].
JAIN, SC ;
VANOVERSTRAETEN, RJ .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :604-606
[9]  
JUNG TW, 1984, IEEE T ELECTRON DEV, V31, P588, DOI 10.1109/T-ED.1984.21573
[10]   SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].
KINGSTON, RH .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834