LIGHT EMISSION FROM ZNSE-GAAS DIODES

被引:3
作者
PARKER, SG
PINNELL, JE
机构
关键词
D O I
10.1063/1.1660672
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3012 / &
相关论文
共 10 条
[1]   MECHANISM OF CHARGE TRANSPORT AND LIGHT EMISSION IN ZNSEXTE1-X P-N JUNCTIONS [J].
AVEN, M ;
GARWACKI, W .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2302-&
[2]   EFFICIENT INJECTION ELECTROLUMINESCENCE IN ZNTE BY AVALANCHE BREAKDOWN - (QUANTUM EFFICIENCY 2 PERCENT AT 5380 A - 77 DEGREES K - LI-DOPED - E) [J].
CROWDER, BL ;
MOREHEAD, FF ;
WAGNER, PR .
APPLIED PHYSICS LETTERS, 1966, 8 (06) :148-&
[3]  
FISCHER AG, AF196283866 CONTR
[4]   ELECTROLUMINESCENCE OF ZNS SINGLE CRYSTALS WITH CATHODE BARRIERS [J].
FRANKL, DR .
PHYSICAL REVIEW, 1958, 111 (06) :1540-1549
[5]   INJECTION ELECTROLUMINESCENCE IN P - TYPE ZNTE [J].
MIKSIC, MG ;
MANDEL, G ;
MOREHEAD, FF ;
ONTON, AA ;
SCHLIG, ES .
PHYSICS LETTERS, 1964, 11 (03) :202-203
[6]  
OMAMOTO R, 1967, JAP J APPL PHYS, V6, P537
[7]  
PARKER SG, TO BE PUBLISHED
[8]   VISIBLE-LIGHT EMITTING DIODES USING (II-VI)-(III-V) SYSTEMS [J].
ROBINSON, RF ;
KUN, ZK .
APPLIED PHYSICS LETTERS, 1969, 15 (11) :371-&
[9]   RAPID, NONDESTRUCTIVE EVALUATION OF MACROSCOPIC DEFECTS IN CRYSTALLINE MATERIALS - LAUE TOPOGRAPHY OF (HG,CD)TE [J].
SWINK, LN ;
BRAU, MJ .
METALLURGICAL TRANSACTIONS, 1970, 1 (03) :629-&
[10]  
TONJIMOTO Y, 1967, JAP J APPL PHYS, V6, P1024