MELTING TEMPERATURE OF AMORPHIZED SILICON HEATED BY NANOSECOND LASER-RADIATION

被引：5
作者：
IVLEV, GD
MALEVICH, VL
ZHIDKOV, VV
机构：
[1] Acad of Sciences of the Byelorussian, SSR, Minsk, USSR, Acad of Sciences of the Byelorussian SSR, Minsk, USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 106卷 / 02期
关键词：
D O I：
10.1002/pssa.2211060242
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：K123 / K127
页数：5
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