IMPATT OSCILLATOR PERFORMANCE IMPROVEMENT WITH SECOND-HARMONIC TUNING

被引：33
作者：
SWAN, CB
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 09期
关键词：
D O I：
10.1109/PROC.1968.6676
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1616 / &
相关论文
共 6 条
[1]  
Gliden M., 1966, IEEE T ELECTRON DEV, V13, P169
[2]   CIRCUIT FOR TESTING HIGH-EFFICIENCY IMPATT DIODES [J].
IGLESIAS, DE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11) :2065-&
[3]   HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J].
JOHNSTON, RL ;
SCHARFET.DL ;
BARTELIN.DJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1611-+
[4]   NOISE SPECTRA OF READ DIODE AND GUNN OSCILLATORS [J].
JOSENHANS, J .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1478-+
[5]   A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].
READ, WT .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446
[6]   IMPROVED PERFORMANCE OF IMPATT DIODES FABRICATED FROM GE [J].
RULISON, RL ;
GIBBONS, G ;
JOSENHANS, JG .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02) :223-+
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