Process Parameter Impact on Selective Laser Ablation of Bilayer Molybdenum Thin Films for CIGS Solar Cell Applications

Cu(In, Ga) Se-2 or CIGS absorber layers are a promising candidate for thin film solar cells, with efficiency exceeding 22% having already been demonstrated at the cell level and their commercialization been ramped up. Scribing by selective ablation to achieve monolithic integration is an essential step in CIGS module making to divide a large area cell into a series of inter-connected smaller cells. P1 scribing or electrical isolation of back contact is an essential part of the monolithic integration. Laser-induced scribing of Molybdenum (Mo) back contact of a CIGS solar cell is highly sensitive to process parameters like laser power, pulse duration, and pulse repetition frequency. The above parameters control the scribe width, heat affected zone and process residue directly or indirectly, thereby affecting electrical isolation and module performance. Influence of laser process parameters on scribing of a bilayer Mo thin film back contact has been investigated and is being reported. The scribes obtained employing various laser conditions were characterized for electrical isolation and analyzed by optical microscopy followed by profilometry. High-quality scribing, with a scribe width of 53 mu m over a length of 300 mm, was achieved on a bilayer Mo thin film sputtered on a Soda lime glass substrate.