MEASUREMENT OF DIFFERENTIAL GAIN AND LINEWIDTH ENHANCEMENT FACTOR OF INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER

被引：10

作者：

DOWD, P ^{[1
]}

SUMMERS, HD ^{[1
]}

WHITE, IH ^{[1
]}

TAN, MRT ^{[1
]}

HOUNG, YM ^{[1
]}

WANG, SY ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,HEWLETT PACKARD LABS,PALO ALTO,CA 94303

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 07期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; LASER LINEWIDTH;

D O I：

10.1049/el:19950371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The differential gain of an InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) has been obtained through measurement of the subthreshold spectral linewidth. The results are in close agreement with a theoretical model for a VCSEL operating at the peak of the gain spectrum. The linewidth enhancement factor has been measured to be similar to 0.7 at low bias currents again in agreement with theory.

引用

页码：557 / 559

页数：3

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