INGAAS RESONANT-TUNNELING TRANSISTORS USING A COUPLED-QUANTUM-WELL BASE WITH STRAINED ALAS TUNNEL BARRIERS

被引：10
作者：
KOCH, S
WAHO, T
MIZUTANI, T
机构：
[1] NTT LSI Laboratories, Atsugi, Kanagawa 243-01
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 09期
关键词：
D O I：
10.1109/16.310099
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bipolar-type resonant tunneling transistor is studied of which the base is identical to a coupled quantum well. On the basis of the InGaAs material system strained AlAs tunnel barriers and a graded InGaAlAs emitter are used. Molecular beam epitaxy growth conditions are studied, showing a specific influence of growth temperature and arsenic pressure. We find clear evidence for resonant tunneling: a saturation of the collector current and a maximum of the transconductance with increasing base-emitter bias in a three-terminal transistor structure. A corresponding effect in a phototransistor structure is found as a maximum of differential current gain with increasing incident light intensity. Room temperature and low temperature (80K) high-frequency properties are determined and are used to estimate the resonant tunneling time.
引用
收藏
页码：1498 / 1503
页数：6
相关论文
共 22 条
[11]  
PASSENBERG W, 1990, INP RELATED COMPOUND, P195
[12]   REALIZATION OF A 3-TERMINAL RESONANT TUNNELING DEVICE - THE BIPOLAR QUANTUM RESONANT TUNNELING TRANSISTOR [J].
REED, MA ;
FRENSLEY, WR ;
MATYI, RJ ;
RANDALL, JN ;
SEABAUGH, AC .
APPLIED PHYSICS LETTERS, 1989, 54 (11) :1034-1036
[13]  
SOLLNE RTCL, 1990, PHYSICS QUANTUM ELEC, pCH6
[14]  
SUGETA T, 1990, VERY HIGH SPEED INTE, pCH5
[15]  
TANIYAMA H, 1994, IEEE T ELECTRON DEVI, V41
[16]   TUNNELING IN A FINITE SUPERLATTICE [J].
TSU, R ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564
[17]   EXPERIMENTAL DERIVATION OF RESONANT TUNNELING TRANSIT-TIME USING A COUPLED-QUANTUM-WELL BASE TRANSISTOR [J].
WAHO, T ;
MIZUTANI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (3B) :L386-L389
[18]   RESONANT TUNNELING IN A NOVEL COUPLED-QUANTUM-WELL BASE TRANSISTOR [J].
WAHO, T ;
MAEZAWA, K ;
MIZUTANI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L2018-L2020
[19]   CLEAR NEGATIVE CHARACTERISTICS OBSERVED IN COUPLED-QUANTUM-WELL BASE RESONANT TUNNELING TRANSISTORS [J].
WAHO, T ;
MAEZAWA, K ;
MIZUTANI, T .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (04) :202-204
[20]  
WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459
123