INVESTIGATION OF HIGH IN CONTENT INGAAS QUANTUM-WELLS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY

被引：20
|
作者：
LORD, SM
PEZESHKI, B
JUN, JSH
机构：
[1] Solid State Electronics Laboratory, Stanford University
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 13期
关键词：
SEMICONDUCTOR GROWTH; EPITAXY AND EPITAXIAL GROWTH;
D O I：
10.1049/el:19920754
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Excitonic resonances and the quantum confined Stark effect are observed near 1.3-mu-m in InGaAs quantum wells grown on GaAs using a slowly graded InGaAs buffer. The pin structure performs as a modulator with a relative transmission modulation of 12% at 1.3-mu-m and as a low leakage photo-detector.
引用
收藏
页码：1193 / 1195
页数：3
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